Passat Diode-Pumped Solid State Lasers


Picosecond Lasers

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Diode Pumped Solid State Air Cooled Picosecond Lasers

Laser Model Output
Pulse Energy (mJ) Maximum Repetition Rate (Hz) Pulse Length Pumping Cooling


Picosecond UV DPSSL Compiler 532 top Small

1064 nm 0,55 400 8 ps Diode Air
532 nm 0.35 400 7 ps Diode Air
355 nm 0.18 400 6 ps Diode Air
266 nm 0.14 400 4 ps Diode Air
213 nm 0.07 400 4 ps Diode Air



1064 nm 2.5
400 8 ps Diode Air
532 nm 1.5 400 6 ps Diode Air
355 nm 0.6 400 5 ps Diode Air
266 nm 0.3 400 4 ps Diode Air
213 nm 0.15 400 4 ps Diode Air

Compiler HPRR
High Repetition Picosecond DPSS Laser

1064 nm 0.065 400 8 ps Diode Air
532 nm 0.040 400 7 ps Diode Air
355 nm 0.020 400 6 ps Diode Air
266 nm 0.012 400 5 ps Diode Air

While high pulse repetition rates provide higher throughput, the high peak power of laser pulses is imperative for cutting different materials with sharper angle, thus significantly reducing material losses and increasing rate of cutting.

The high peak power is one of the most important features of Passat’s family of picosecond lasers, especially at short UV wavelengths (266 nm, 213 nm).

The chart below compares peak powers produced by commercially available DPSS picosecond lasers:


In particular, the high laser peak power is necessary for cutting transparent dielectrics (via cold ablation) with wide energy band gap such as diamond, sapphire, quartz and fused silica. Because, for high intensity laser beams two photons absorption dominates over single photon absorption, which is relatively low at wavelengths produced by most commercially available lasers. As the result, the ablation threshold drops, the ablation rate increases and the typical taper angle of cutting α becomes sharper, which increases the cutting depth. Sample cuts of different materials with different taper angle α are shown on the following page: Materials Processing

Our estimates, made for two photons absorption, allowed finding the cutting taper angle α which is determined by the following formula:

α ≈ λ/E1/2 x (ΘPD/γβτ)1/4 ,

where E is the laser pulse energy (in J), ΘPD is the energy characterizing photo-decomposition of dielectric by UV picosecond pulses (in J/cm3), β is the coefficient of two photon absorption (in cm/W), γ is the portion of energy absorbed by dielectric after deduction of radiative losses, τ is the laser pulse width (in sec).

The angle α does not depend on pulse repetition rate and depends very slightly on parameter PD/γβτ)1/4, characterizing the dielectric to be cut. But the dependence on the wavelength and pulse energy is rather strong. For example, for ΘPD = 10 kJ/cm3 , β = 4 cm/GW, γ = 0.5, τ = 5 ps, E = 100 μJ, λ = 266 nm, the angle α is equal to 6 mrad (or 0.350). Such an angle provides very low cutting losses. If anyone needs to cut a dielectric sphere half-and-half the losses will be about α/2, which for the example above corresponds to only 0.3%.

To cut material through the given thickness H, the volume of material removed will be proportional to α or ~~1/\sqrt{E}


Even at the same average power, Greater Pulse Energy Provides Faster Cutting.

DPSS lasers in the Compiler family enjoy the following technological benefits:
  1. The highest pulse energy especially in the UV wavelength range, which reduces material losses.
  2. High energy short picosecond pulses allow micro machining of thicker materials, such as drilling and cutting of glass, diamond, ceramics, metals, etc. up to few millimetres thick.
  3. The most compact sizes (per energy unit), light weight and low power consumption among comparable picosecond UV lasers.
  4. Air Cooling.