ArF at 193 nm and KrF at 248 nm provide established deep-UV alternatives. However, excimer systems are typically large gas lasers requiring high-voltage equipment, gas handling and more complex maintenance. Their gas mixtures can contain hazardous halogens, increasing safety and operating requirements, while the complete systems are often substantially more expensive.
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Compact, all-solid-state laser systems combining high pulse energy with flexible configurations for advanced material processing, scientific research and industrial integration.
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Why Passat
Engineered around your process
Why Passat Lasers
Are Different
There is no single laser configuration that is optimal for every material and process.
Passat systems can be configured around the application, giving researchers and manufacturers greater control over how laser energy is delivered to the material.
213 nm
Deep UV at 213 nm
Rare commercially available all-solid-state picosecond operation at 213 nm.
1064–213 nm
Selectable Wavelength
Laser configurations from 1064 nm in the infrared to 213 nm in the deep UV.
10–70 ps
Configurable Pulse Width
Select the picosecond pulse width for the required peak power and thermal effect.
Low Hz / 1,000 Hz / up to 12,000 Hz
Flexible Repetition Rate
Choose higher pulse energy at lower rates or greater throughput at higher rates.
Single / Double
Advanced Pulse Control
Single or double pulses, with sharp-front or gradual-front pulse configurations.
Gaussian / Top-Hat
Selectable Beam Profile
Gaussian and top-hat configurations for different energy distributions and geometries.
Deep-UV Advantage
213nm
5.82 eV
photon energy
High picosecond peak powerHighest photon energy in the Passat wavelength rangeMicron-scale focusing and micron-scale holesTwo-photon absorption in wide-bandgap materialsProcessing of transparent dielectricsDrilling of thin and brittle materialsMicromachining of extremely hard materials, including tungsten carbideClean holes with minimal scorching, melting and edge chipping
Deep-UV picosecond operation
Why 213 nm Matters
One of the key advantages of the 213 nm wavelength is its ability to induce nonlinear two-photon absorption. This process occurs only at high laser intensities and becomes the key mechanism for drilling and micromachining wide-bandgap dielectric materials such as fused silica, quartz, sapphire and many technical ceramics.
A single 213 nm photon carries approximately 5.82 eV of energy. Although this is below the bandgap of fused silica (approximately 9 eV), the simultaneous absorption of two photons provides sufficient energy to excite electrons across the bandgap and initiate laser ablation. At longer wavelengths, such as 1064 nm, approximately eight photons must be absorbed simultaneously to achieve the same effect, making the process much less efficient.
The high peak power required for two-photon absorption is achieved by the combination of picosecond pulse duration and high pulse energy. At the same time, picosecond pulses minimize the interaction time between the laser beam and the material, reducing heat diffusion, edge chipping, microcracks and the heat-affected zone. This is particularly important for precision processing of brittle materials such as UV-grade fused silica and other optical components.
The 213 nm wavelength also enables the laser beam to be focused into spots only a few microns in diameter, producing extremely high local intensity while allowing the fabrication of micron-scale features and high-aspect-ratio micro-holes. This capability is especially valuable for applications in microelectronics, medical devices, photonics, MEMS, and other fields requiring ultra-precise laser micromachining.
Together, the deep-UV wavelength, picosecond pulse duration and high peak power create a unique combination of nonlinear absorption, micron-scale focusing and minimal thermal impact. These advantages make 213 nm picosecond lasers an excellent tool for precision micromachining of a wide range of materials, including transparent dielectrics, semiconductors, metals and ultra-hard materials such as tungsten carbide.
Alternative Sources of Deep-UV Light
Solid-state 213 nm lasers are also available with nanosecond pulses. They provide the same wavelength, but their much longer pulse width produces lower peak power at the same pulse energy and allows more time for heat to spread into the material.
Configure Your Laser
Flexible by design
Configure the Laser
Around Your Application
Different metals can require very different processing conditions. Semiconductors such as silicon—and especially dielectric materials such as ceramics, fused silica and quartz—require careful selection of wavelength, pulse width, fluence, repetition rate and pulse mode for efficient, high-quality processing.
High pulse energy
Efficient metal processing, ablation and plasma generation.
Ranging & sensing
LiDAR, atmospheric measurements, bathymetry and underwater scanning.
Versatile UV
Effective processing of metals, polymers, ceramics and semiconductors.
High-resolution UV
Smaller focal spots and improved absorption in difficult materials.
Deep-UV precision
Two-photon interaction in wide-bandgap dielectrics, glass and quartz.
10 / 30 / 70 ps
Balance peak power, ablation efficiency, thermal effect and process stability.
Sharp or Gradual Front
Control how rapidly the interaction, plasma formation and shock wave begin.
Single or Double Pulse
Modify drilling efficiency, material removal and plasma development.
Low Hz / 1,000 Hz / up to 12,000 Hz
Choose higher pulse energy at lower rates or greater throughput at higher rates.
Start a conversation
What does your application require?
Tell us about the material, thickness, feature size and required process result. We will help identify a suitable laser configuration.
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