01 · Two-Photon Absorption in Wide-Bandgap Dielectrics
Transparent dielectrics, such as fused silica, are difficult to drill with conventional lasers because they are transparent to laser light at the wavelengths commonly used for material processing. The laser beam simply passes through the material without depositing enough energy to remove it.
At 213 nm, in the deep-UV range, a different interaction mechanism becomes available: two-photon absorption. When the laser intensity and fluence are sufficiently high, the material can absorb two 213 nm photons simultaneously. Each photon carries approximately 5.82 eV, giving a combined energy of 11.64 eV—higher than the bandgap of many transparent dielectrics. Examples of such materials are provided in the table below.
Under these conditions, the material becomes effectively non-transparent to the 213 nm laser beam. Instead of passing through, the laser energy is absorbed through the two-photon process. This allows transparent dielectrics to be drilled and processed in the same way as other solid materials.
UV-grade fused silica is a particularly important example. Its high chemical purity, low thermal expansion and low dielectric loss make it valuable for photonics, semiconductor packaging, microfluidics and advanced electronics. However, the absence of impurities that could help initiate laser–material interaction makes precise drilling and ablation especially difficult.
At 213 nm, sufficiently high laser intensity and fluence activate two-photon absorption, allowing energy to be transferred directly into the material. As a result, even highly transparent UV-grade fused silica can be precisely drilled, ablated and micromachined.
| Example dielectric |
Approx. bandgap |
213 nm two-photon energy |
Typical applications |
| UV-grade fused silica (SiO2) |
8.9–9.0 eV |
11.64 eV |
DUV optics, photomasks, glass interposers and microfluidic chips |
| Sapphire (Al2O3) |
8.8–9.0 eV |
11.64 eV |
LED substrates, optical windows, sensors and RF electronics |
| Beryllium oxide (BeO) |
≈10.6 eV |
11.64 eV |
Heat-spreading substrates for high-power RF and microwave electronics |
| Aluminum nitride (AlN) |
6.0–6.2 eV |
11.64 eV |
Power-electronics substrates, LED modules and thermal-management components |
| Magnesium oxide (MgO) |
≈7.8 eV |
11.64 eV |
Insulating substrates, protective coatings and magnetic-memory tunnel barriers |
Representative values; the exact bandgap depends on material composition, structure and measurement method.
1064 nm is widely used for laser drilling, but each photon carries only about 1.17 eV—far below the approximately 9 eV bandgap of high-purity fused silica. As a result, 1064 nm laser light couples poorly into this transparent material. At 213 nm, the much higher photon energy enables a two-photon absorption pathway within the focused picosecond pulse, making localized processing of wide-bandgap dielectrics substantially more practical.